Plasma Etch Technological Advantages

High Frequency R.F. Power

GENERAL
The use of high frequency R.F. power is instrumental in creating a high efficiency plasma. High frequency plasmas produce greater process uniformity and improved throughput.

DESCRIPTION
• The physics of a high frequency R.F. plasma is very different from a low frequency R.F. plasma. The high frequency generates a much more reactive plasma.
• The high frequency plasma tends to be isotropic (etches uniformly in all directions).
• Nominal R.F. power levels (watt densities) are required to generate an optimum etch rate.
• R.F. power is held constant throughout the plasma process, and is independent of all other plasma parameters.
• High frequency RF power requires an active matching network along with greater care in initial system design. Though these factors increase up-front costs, the system yields superior processing results.
• Plasma Etch systems use proven commercially available R.F. generators. We have elected to use a proven "bullet proof" technology, which uses a high power tube as the final amplifier.

ADVANTAGES
• The more reactive plasma generated by high frequency has a faster etch rate.
• The isotropic nature of high frequency plasma allows for the processing of three dimensional objects.
• Competitors' systems may use much higher R.F. power levels (watt densities) in an attempt to overcome the restricted etch rates associated with low frequency R.F. power. The higher power levels also compound the problem of temperature control, as they introduce more heat into the system.
• Constant RF power produces maximum and predictable etch rates.
• The "bullet proof" R.F. generators used in Plasma Etch systems have proven very reliable.