RF Power Source
R.F. Power is a critical parameter in the plasma process since R.F. Frequency and power levels directly effect processing rates. Plasma Etch, Inc. manufactures plasma systems with high-frequency R.F. Power (13.56 MHz). This power remains consistent throughout the entire plasma sequence, providing maximum and predictable etch rates. High frequency R.F. Power generates highly reactive isotropic plasma and exceptional etch rates. Isotropic plasma etches in all directions and is most functional for three dimensional substrates.
Frequency and power level directly effect processing rates. Low frequency systems produce anisotropic plasma and have reduced processing rates and production throughput. High frequency systems produce isotropic plasma and have much higher processing rates or etch rates as they produce much more reactive plasma. High frequency also comes equipped with an automatic matching network.
Depending on application needs, the RF power (watt densities) must supply constant power over the entire plasma sequence. The brand of the RF generator should be a reputable manufacturer as to ensure reliability.
Sometimes much higher RF power levels are used to compensate and overcome restricted etch rates associated with low frequency RF power.